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 Product Specification
www.jmnic.com
Silicon PNP Power Transistors
2SA913 2SA913A
DESCRIPTION With TO-220 package Complement to type 2SC1913/1913A Large collector power dissipation High VCEO APPLICATIONS Audio frequency high power driver
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25ae )
SYMBOL PARAMETER 2SA913 VCBO Collector-base voltage 2SA913A 2SA913 VCEO Collector-emitter voltage 2SA913A VEBO IC ICM PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25ae Open collector Open base -180 -5 -1 -1.5 15 150 -55~150 ae ae V A A W Open emitter -180 -150 V CONDITIONS VALUE -150 V UNIT
JMnic
Product Specification
www.jmnic.com
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER 2SA913 IC=-0.1mA ,IB=0 2SA913A IE=-10|I A ,IC=0 CONDITIONS
2SA913 2SA913A
SYMBOL
MIN -150
TYP.
MAX
UNIT
V(BR)CEO
Base-emitter breakdown voltage
V -180 -5 -1.0 V -1.5 V
V(BR)EBO
Emitter-base breakdown voltage 2SA913 2SA913A 2SA913 2SA913A
VCEsat
Collector-emitter saturation voltage
IC=-0.5A; IB=-50mA IC=-0.3A; IB=-30mA IC=-0.5A; IB=-50mA
VBEsat
Base-emitter saturation voltage
-1.5 IC=-0.3A; IB=-30mA VCB=-120V; IE=0 VEB=-4V; IC=0 IC=-150mA ; VCE=-10V IC=-500mA ; VCE=-5V IE=0 ;VCB=-100V;f=1MHz IC=50mA ; VCE=-10V 120 65 50 15 -1 -1 330 |I |I
V
ICBO IEBO hFE-1 hFE-2 COB fT
Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency
A A
pF MHz
hFE-1 Classifications P 65-110 Q 90-155 R 130-220 S 185-330
JMnic
Product Specification
www.jmnic.com
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA913 2SA913A
Fig.2 Outline dimensions(unindicated tolerance:A
0.10 mm)
JMnic


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